The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2025
Filed:
May. 18, 2022
Applicants:
Hyundai Motor Company, Seoul, KR;
Kia Corporation, Seoul, KR;
Inventors:
Junghee Park, Suwon-si, KR;
Dae Hwan Chun, Suwon-si, KR;
Jungyeop Hong, Seoul, KR;
Youngkyun Jung, Seoul, KR;
Nackyong Joo, Suwon-si, KR;
Assignees:
HYUNDAI MOTOR COMPANY, Seoul, KR;
KIA CORPORATION, Seoul, KR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/04 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H10D 30/01 (2025.01); H10D 30/66 (2025.01);
U.S. Cl.
CPC ...
H10D 30/668 (2025.01); H01L 21/26586 (2013.01); H01L 21/266 (2013.01); H10D 30/0297 (2025.01);
Abstract
A method for manufacturing a semiconductor device includes forming an N-type layer on the first surface of the N+ type substrate, etching the N-type layer to form a trench, forming a sacrificial layer on an inner bottom surface of the trench, forming a first mask on an inner side of the trench, removing the sacrificial layer, and forming a P type shield region by implanting ions into an inner surface of the trench exposed by the removal of the sacrificial layer.