The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2025

Filed:

Mar. 02, 2021
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Namiki Yoshikawa, Suzuka, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/50 (2023.01); H01L 23/522 (2006.01); H10B 41/27 (2023.01); H10B 41/50 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 43/50 (2023.02); H01L 23/5226 (2013.01); H10B 41/27 (2023.02); H10B 41/50 (2023.02); H10B 43/27 (2023.02);
Abstract

A semiconductor memory device includes: a plurality of first conductive layers disposed in a first direction; a structure that includes a first semiconductor layer extending in the first direction and being opposed to the plurality of first conductive layers, agate insulating layer being disposed between the first semiconductor layer and the plurality of first conductive layers, and a second semiconductor layer being contact to one end portion of the first semiconductor layer; a contact connected to the second semiconductor layer; an insulating portion that separates a part of the plurality of first conductive layers in a second direction and is in contact with the structure and the contact from one side in the second direction; and a first insulating layer in contact with the contact from the other side in the second direction. The insulating portion includes an insulating material different from a material of the first insulating layer.


Find Patent Forward Citations

Yoshikawa, Namiki. (2025). Semiconductor memory device including an insulating portion having a varying width (U.S. Patent No. 12342546). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12342546

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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