The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2025
Filed:
Apr. 27, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Kyungsoo Kim, Hwaseong-si, KR;
Kyenhee Lee, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A static random-access memory (SRAM) device including a three-dimensional structured (3DS) field-effect transistor (FET) having a minimized planar area and a simple wiring connection structure includes a semiconductor substrate, a first fin active region extending on the semiconductor substrate in a first direction, a second fin active region extending on the semiconductor substrate in the first direction and apart from the first fin active region in a second direction perpendicular to the first direction, and four gates extending in the second direction and intersecting part of the first fin active region or the second fin active region. Each of the first fin active region and the second fin active region includes a first region in which only a lower layer is arranged and a second region in which an upper layer is arranged on the lower layer.