The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2025

Filed:

Nov. 07, 2023
Applicant:

Em Microelectronic-marin SA, Marin, CH;

Inventors:

Oskar Krenek, Praha-Kolodeje, CZ;

Christoph Kuratli, La Neuveville, CH;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/03 (2006.01); H03K 3/01 (2006.01); H03K 3/013 (2006.01);
U.S. Cl.
CPC ...
H03K 3/0315 (2013.01); H03K 3/01 (2013.01); H03K 3/013 (2013.01);
Abstract

A system with a low-drift on-chip (LD-RC) oscillator with lowered sensitivity to Random Telegraph Noise when generating a current (Id) for the LD-RC oscillator. A control resistor (R) is connected through an intermediary arrangement to one of a first MOS transistor (M) or of a second MOS transistor (M) between two terminals of a supply voltage source (Vdd). The gate of the first MOS transistor (M) is connected to the gate of the second MOS transistor (M), whereas the source of the first MOS transistor (M) and the source of the second MOS transistor (M) are connected to one terminal of the supply voltage source (Vdd), the control resistor (R) being connected to the other opposite terminal of the supply voltage source.


Find Patent Forward Citations

Loading…