The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2025

Filed:

Mar. 16, 2022
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventor:

Taizo Tatsumi, Osaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F 1/26 (2006.01); H03F 1/56 (2006.01); H03F 3/195 (2006.01); H03F 3/24 (2006.01);
U.S. Cl.
CPC ...
H03F 1/26 (2013.01); H03F 1/56 (2013.01); H03F 3/195 (2013.01); H03F 3/245 (2013.01); H03F 2200/294 (2013.01); H03F 2200/451 (2013.01);
Abstract

A semiconductor device includes input and output terminals, first and second power supply terminals, first and second transistors, and a first resistance element. In the first transistor, gate and source terminals are respectively connected to the input terminal and the first power supply terminal, a drain terminal is connected to the second power supply terminal in direct current and to the output terminal, and the gate and drain terminals are connected via the first resistance element. In the second transistor, a source terminal is connected to the first power supply terminal, and gate and drain terminals are short-circuited at a node connected to the gate terminal of the first transistor in direct current. In a lower frequency region, an impedance of the first resistance element is lower than impedances of parasitic capacitances in the first transistor between the gate and drain terminals and between the gate and source terminals.


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