The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2025

Filed:

Feb. 16, 2024
Applicant:

Semiconductor Components Industries, Llc, Scottsdale, AZ (US);

Inventor:

Michael J. Seddon, Gilbert, AZ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 21/027 (2006.01); H01L 21/268 (2006.01); H01L 21/32 (2006.01); H01L 21/3205 (2006.01); H01L 21/3213 (2006.01); H01L 21/66 (2006.01); H01L 23/544 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 21/0274 (2013.01); H01L 21/268 (2013.01); H01L 21/32 (2013.01); H01L 21/32051 (2013.01); H01L 21/32131 (2013.01); H01L 22/20 (2013.01); H01L 23/544 (2013.01); H01L 2223/5446 (2013.01);
Abstract

Implementations of methods of singulating a plurality of die included in a substrate may include forming a plurality of die on a first side of a substrate, forming a backside metal layer on a second side of a substrate, applying a photoresist layer over the backside metal layer, patterning the photoresist layer along a die street of the substrate, and etching through the backside metal layer located in the die street of the substrate. The substrate may be exposed through the etch. The method may also include singulating the plurality of die included in the substrate through removing a substrate material in the die street.


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