The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2025
Filed:
Mar. 22, 2022
Fuji Electric Co., Ltd., Kanagawa, JP;
Kazuhiro Kitahara, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
Provided is a manufacturing method of a semiconductor device comprising a semiconductor substrate which includes a first surface and a second surface which is on an opposite side of the first surface, the method comprising: a front surface processing for providing a first resist to the first surface of the semiconductor substrate and processing the first surface; a first protective film forming for forming a first protective film above the first surface of the semiconductor substrate; a second protective film forming for forming a second protective film above the first protective film, wherein a material of the second protective film is different from that of the first protective film; a back surface processing for processing the second surface of the semiconductor substrate; and a protective film removing for selectively removing the second protective film.