The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2025

Filed:

Jan. 04, 2021
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventor:

Varun Sharma, Helsinki, FI;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); H01L 21/02167 (2013.01); H01L 21/02315 (2013.01);
Abstract

Methods for depositing silicon-containing thin films, such as SiCN films, on a substrate in a reaction space are provided. The methods can include a vapor deposition process utilizing a vapor-phase silicon precursor comprising a halogen and a second vapor-phase reactant comprising an amine reactant. In some embodiments an atomic layer deposition (ALD) cycle comprises alternately and sequentially contacting the substrate with a silicon precursor comprising a halogen and a second reactant comprising an amine reactant. In some embodiments a SiCN thin film is deposited by alternately contacting the substrate with a halosilane such as octachlorotrisilane and an amine reactant comprising a diamine or triamine.


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