The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2025
Filed:
Oct. 19, 2022
Aceinna Transducer Systems Co., Ltd., Wuxi, CN;
ACEINNA Transducer Systems Co., Ltd., Wuxi, CN;
Abstract
A double pinned magnetoresistance (MR) multilayer film, a full bridge MR sensor using the double pinned MR multilayer film and a method for manufacturing the full bridge MR sensor are provided in the present invention. The double pinned MR multilayer film comprises: a buffer layer, a first antiferromagnetic layer, a first ferromagnetic layer, a first interlayer, a ferromagnetic reference layer, a spacer layer, a ferromagnetic free layer, a second interlayer, a second ferromagnetic layer, a second antiferromagnetic layer and a cover layer that are stacked in sequence. The first antiferromagnetic layer applies a first exchange bias to the first ferromagnetic layer, and the first ferromagnetic layer applies a first artificial antiferromagnetic coupling to the ferromagnetic reference layer through the first interlayer. The second antiferromagnetic layer applies a second exchange bias to the second ferromagnetic layer, and the second ferromagnetic layer applies a second artificial antiferromagnetic coupling to the ferromagnetic free layer through the second interlayer. The full bridge MR sensor can not only realize the full bridge function in a single chip, but also has small zero point, simple annealing process and low cost through two global annealing.