The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2025

Filed:

Oct. 30, 2019
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Katsumi Suemitsu, Yamagata, JP;

Makoto Ueki, Yamagata, JP;

Masashige Moritoki, Yamagata, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/10 (2023.01); G01R 33/09 (2006.01); G11C 11/16 (2006.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
G01R 33/093 (2013.01); G11C 11/161 (2013.01); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02);
Abstract

A magnetoresistive element of the present disclosure includes a multilayer structure made up of at least a fixed magnetization layer, an intermediate layer and a storage layer. A first side wall is formed on a side wall of the multilayer structure. A second side wall is formed on the first side wall. The first side wall is made of an insulating material, for instance SiN or AlOx, that prevents intrusion of hydrogen. The second side wall is made of a hydrogen storage material, for instance titanium.


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Suemitsu, Katsumi. (2025). Magnetoresistive element and semiconductor device (U.S. Patent No. 12339334). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12339334

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