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The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2025
Filed:
Feb. 15, 2025
China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou, CN;
Yiqiang Chen, Guangzhou, CN;
Haofan Long, Guangzhou, CN;
Bo Hou, Guangzhou, CN;
Changjian Zhou, Guangzhou, CN;
Abstract
In a method for monitoring a degradation mechanism of a switch device in a power conversion circuit. When individually determining the degradation mechanism of internal defects of the switch device, it is determined through a change trend of a real-time current change rate that internal defect degradation is caused by an increase of an oxide layer defect density or an interface defect density. It is confirmed through a decrease in the real-time current change rate that internal defect degradation is caused by the increase of the oxide layer defect density. When the real-time current change rate increases, it is determined through a secondary testing including the on-state resistance and low-frequency noise testing that degradation is caused by accurate packaging and/or the increase of the interface defect density.