The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Oct. 23, 2020
Applicant:
Dowa Electronics Materials Co., Ltd., Tokyo, JP;
Inventors:
Assignee:
DOWA Electronics Materials Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10H 20/824 (2025.01); H10H 20/01 (2025.01); H10H 20/812 (2025.01); H10H 20/816 (2025.01); H10H 20/857 (2025.01);
U.S. Cl.
CPC ...
H10H 20/8242 (2025.01); H10H 20/013 (2025.01); H10H 20/812 (2025.01); H10H 20/8162 (2025.01); H10H 20/857 (2025.01);
Abstract
In a light-emitting element including a first InAs layer that is undoped or doped with an n-type dopant; an active layer including one or more InAsSblayers (0<y<1); and a second InAs layer doped with a p-type dopant, an AlInAs electron blocking layer (0.05≤x≤0.40) with a thickness of 5 nm to 40 nm is provided between the active layer and the second InAs layer.