The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2025

Filed:

Jun. 29, 2022
Applicant:

Seoul Viosys Co., Ltd., Gyeonggi-do, KR;

Inventors:

Dae Hong Min, Gyeonggi-do, KR;

Yong Hyun Baek, Gyeonggi-do, KR;

Ji Hun Kang, Gyeonggi-do, KR;

Assignee:

Seoul Viosys Co., Ltd., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10H 20/821 (2025.01); H10H 20/812 (2025.01); H10H 20/815 (2025.01); H10H 20/825 (2025.01);
U.S. Cl.
CPC ...
H10H 20/821 (2025.01); H10H 20/812 (2025.01); H10H 20/815 (2025.01); H10H 20/825 (2025.01);
Abstract

A multi-band light emitting diode is provided. The multi-band light emitting diode includes a first conductivity type semiconductor layer, a V-pit generation layer disposed on the first conductivity type semiconductor layer and having a first V-pit of a first inlet width, a stress relief layer disposed on the V-pit generation layer and providing a second V-pit of a second inlet width greater than the first inlet width of the V-pit on the first V-pit, an active layer disposed on the stress relief layer and including a first active layer region formed on a flat surface of the stress relief layer and a second active layer region formed in the second V-pit, and a second conductivity type semiconductor layer disposed on the active layer.


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