The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Nov. 30, 2022
Cambridge Enterprise Ltd, Cambridge, GB;
Rachel A. Oliver, Cambridge, GB;
Tongtong Zhu, Cambridge, GB;
Yingjun Liu, Cambridge, GB;
Peter Griffin, Cambridge, GB;
CAMBRIDGE ENTERPRISE LTD, Cambridge, GB;
Abstract
A method for etching a semiconductor structure () is provided, the semiconductor structure comprising a sub-surface quantum structure () of a first III-V semiconductor material, beneath a surface layer () of a second III-V semiconductor material having a charge carrier density of less than 5×10cm. The sub-surface quantum structure may comprise, for example, a quantum well, or a quantum wire, or a quantum dot. The method comprises the steps of exposing the surface layer to an electrolyte (), and applying a potential difference between the first III-V semiconductor material and the electrolyte, to electrochemically etch the sub-surface quantum structure () to form a plurality of nanostructures, while the surface layer () is not etched. A semiconductor structure, uses thereof, and devices incorporating such semiconductor structures are further provided.