The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
May. 15, 2020
Beijing Tongmei Xtal Technology Co., Ltd., Beijing, CN;
Rajaram Shetty, Fremont, CA (US);
Yuanli Wang, Beijing, CN;
Weiguo Liu, Fremont, CA (US);
Yvonne Zhou, Fremont, CA (US);
Sung-Nee George Chu, Fremont, CA (US);
BEIJING TONGMEI XTAL TECHNOLOGY CO., LTD., Beijing, CN;
Abstract
A germanium single-crystal wafer comprises silicon with an atomic concentration of from 3×10atoms/cc to 10×10atoms/cc, boron with an atomic concentration of from 1×10atoms/cc to 10×10atoms/cc, and gallium with an atomic concentration of from 1×10atoms/cc to 10×10atoms/cc. Further provided are a method for preparing the germanium single-crystal wafer, a method for preparing a germanium single-crystal ingot, and the use of the germanium single-crystal wafer for increasing the open-circuit voltage of a solar cell. The germanium single-crystal wafer has an improved electrical property in that it has a smaller difference in resistivity and carrier concentration.