The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2025

Filed:

Jan. 05, 2023
Applicant:

Hoon Kim, Seoul, KR;

Inventor:

Hoon Kim, Seoul, KR;

Assignee:

[object Object];

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10F 39/18 (2025.01); H10F 30/28 (2025.01); H10F 30/282 (2025.01); H10F 39/00 (2025.01); H10F 77/16 (2025.01); H10F 77/40 (2025.01); H10F 39/12 (2025.01);
U.S. Cl.
CPC ...
H10F 30/282 (2025.01); H10F 30/2823 (2025.01); H10F 39/8033 (2025.01); H10F 77/16 (2025.01); H10F 77/413 (2025.01); H10F 77/496 (2025.01); H10F 39/12 (2025.01); H10F 39/196 (2025.01);
Abstract

Provided are a light-receiving element which has more capability of detecting wavelengths than that of existing silicon light-receiving elements and a unit pixel of an image sensor by using it. The light-receiving element includes: a light-receiving unit which is floated or connected to external voltage and absorbs light; an oxide film which is formed to come in contact with a side of the light-receiving unit; a source and a drain which stand off the light-receiving unit with the oxide film in between and face each other; a channel which is formed between the source and the drain and forms an electric current between the source and the drain; and a wavelength expanding layer which is formed in at least one among the light-receiving unit, the oxide film and the channel and forms a plurality of local energy levels by using strained silicon.


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