The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2025

Filed:

Dec. 23, 2022
Applicant:

Murata Manufacturing Co., Ltd., Nagaokakyo, JP;

Inventors:

Julien El Sabahy, Grenoble, FR;

Larry Buffle, Grenoble, FR;

Stéphane Bouvier, Cairon, FR;

Frédéric Voiron, Barraux, FR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/01 (2006.01); H01L 21/70 (2006.01); H10D 1/00 (2025.01); H10D 1/47 (2025.01); H10D 1/68 (2025.01); H10D 86/85 (2025.01);
U.S. Cl.
CPC ...
H10D 86/85 (2025.01); H01L 21/707 (2013.01); H10D 1/042 (2025.01); H10D 1/47 (2025.01); H10D 1/716 (2025.01);
Abstract

A semi-conductor structure with selective bottom terminal contacting is described. The semiconductor device comprises a first metal layer disposed over a substrate; a conductive layer disposed over the first metal layer; and a second metal layer disposed over the conductive layer, the second metal layer embedding a porous structure comprising a plurality of pores that extend substantially perpendicularly from a top surface of the porous structure toward the conductive layer, wherein only a subset of the plurality of pores open onto the conductive layer.


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