The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2025

Filed:

Apr. 15, 2022
Applicant:

Guangzhou China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Guangdong, CN;

Inventors:

Jun Zhao, Guangdong, CN;

Bin Zhao, Guangdong, CN;

Juncheng Xiao, Guangdong, CN;

Shan Li, Guangdong, CN;

Wei Wu, Guangdong, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 86/01 (2025.01); H10D 30/67 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01);
U.S. Cl.
CPC ...
H10D 86/0227 (2025.01); H10D 30/6755 (2025.01); H10D 86/423 (2025.01); H10D 86/60 (2025.01);
Abstract

The present disclosure provides a method for manufacturing a thin film transistor array substrate and a display panel. The method includes: forming a plurality of dispersed metal oxide grains on a substrate; forming an amorphous metal oxide semiconductor layer in contact with the plurality of metal oxide grains, and at least one metal element in the metal oxide grain is same as metal elements in the metal oxide semiconductor layer; performing an annealing process on the amorphous metal oxide semiconductor layer, to obtain a crystallized metal oxide semiconductor layer.


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