The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Nov. 14, 2024
Samsung Electronics Co., Ltd., Suwon-si, KR;
Keumseok Park, Slingerlands, NY (US);
Edward Namkyu Cho, Albany, NY (US);
Kang-ill Seo, Springfield, VA (US);
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
Provided is a semiconductor device which includes: a 1source/drain pattern for a 1transistor; a 2source/drain pattern for a 2transistor, above the 1source/drain pattern, the 2source/drain pattern having a smaller width than the 1source/drain pattern in a channel-width direction; a 1isolation layer surrounding the 1source/drain pattern; a 2isolation layer surrounding the 2source/drain pattern, the 1and 2isolation layers including a first material; a liner surrounding the 1source/drain pattern, the liner including a 2material; and a contact structure on the 1source/drain pattern, wherein the contact structure penetrates the 2isolation layer and the liner to contact the 1source/drain pattern without penetrating the 1isolation layer.