The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2025

Filed:

Jan. 27, 2022
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Yusuke Kobayashi, Nagareyama, JP;

Tatsuo Shimizu, Shinagawa, JP;

Tomoaki Inokuchi, Yokohama, JP;

Hiro Gangi, Ota, JP;

Hiroki Nemoto, Fuchu, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 64/23 (2025.01); H10D 30/01 (2025.01); H10D 30/63 (2025.01); H10D 64/00 (2025.01); H10D 64/01 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 64/258 (2025.01); H10D 30/025 (2025.01); H10D 64/01 (2025.01); H10D 64/111 (2025.01); H10D 30/63 (2025.01); H10D 64/513 (2025.01);
Abstract

According to one embodiment, a semiconductor device includes first to third electrodes, a first conductive member, a semiconductor member, and a first insulating member. The third electrode includes a third electrode end portion and a third electrode other end portion. The third electrode end portion is between the first electrode and the third electrode other end portion. The first conductive member includes a first conductive member end portion and a first conductive member other end portion. The first conductive member end portion is between the first electrode and the first conductive member other end portion. The semiconductor member includes first to third semiconductor regions. The first semiconductor region includes first and second partial regions. The first insulating member includes silicon and oxygen. The first insulating member includes a first element including at least one selected from the group consisting of nitrogen, aluminum, hafnium and zirconium at the third position.


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