The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Apr. 30, 2021
Boe Technology Group Co., Ltd., Beijing, CN;
Jie Huang, Beijing, CN;
Zhengliang Li, Beijing, CN;
Ce Ning, Beijing, CN;
Hehe Hu, Beijing, CN;
Nianqi Yao, Beijing, CN;
Kun Zhao, Beijing, CN;
Fengjuan Liu, Beijing, CN;
Tianmin Zhou, Beijing, CN;
Liping Lei, Beijing, CN;
BOE Technology Group Co., Ltd., Beijing, CN;
Abstract
A thin film transistor includes a gate electrode, an active layer, a gate insulating layer located between the gate electrode and the active layer, and a source electrode and a drain electrode electrically connected to the active layer. The active layer includes a channel layer and at least one channel protection layer; a material of each of the channel layer and the at least one channel protection layer is a metal oxide semiconductor material. The at least one channel protection layer is a crystallizing layer, and metal elements of the at least one channel protection layer include non-rare earth metal elements including In, Ga, Zn and Sn.