The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Apr. 18, 2022
Samsung Display Co., Ltd., Yongin-si, KR;
Joonseok Park, Yongin-si, KR;
Jihun Lim, Yongin-si, KR;
Myounghwa Kim, Yongin-si, KR;
Taesang Kim, Yongin-si, KR;
Yeonkeon Moon, Yongin-si, KR;
SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;
Abstract
A thin film transistor includes an active layer over a substrate, a gate electrode over the active layer, a gate line connected with the gate electrode, and a gate insulation film between the active layer and the gate electrode. The active layer includes a channel region overlapping the gate electrode, and a drain region and a source region on respective sides of the channel region. A length of a straight line connecting the drain region and the source region by a shortest distance may be greater than a width of the gate line parallel to the straight line.