The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Sep. 15, 2021
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Kouta Tomita, Nonoichi Ishikawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Abstract
A semiconductor device includes: a first electrode; a first semiconductor layer of first conductivity type provided on the first electrode; a first semiconductor region of second conductivity type provided on the first semiconductor layer; a second semiconductor region of first conductivity type provided on the first semiconductor region; a second electrode provided in a first trench, the second electrode facing the first semiconductor region with a first insulating film interposed between the second electrode and the first semiconductor region and the first trench reaching the first semiconductor layer from above the first semiconductor region; a third electrode provided in a second trench, the third electrode facing the first semiconductor region with a second insulating film interposed between the third electrode and the first semiconductor region and the second trench reaching the first semiconductor layer from above the first semiconductor region; a fourth electrode reaching the first semiconductor region from above the second semiconductor region, the fourth electrode being provided between the first trench and the second trench and between the second electrode and the third electrode and the fourth electrode containing a first conductive material; a fifth electrode provided between the fourth electrode and the first semiconductor region and between the fourth electrode and the second semiconductor region, the fifth electrode containing a second conductive material, a film thickness of the fifth electrode between the fourth electrode and the first semiconductor region in a first direction in which the first electrode and the first semiconductor layer are stacked being smaller than a film thickness of the fifth electrode between the fourth electrode and the second semiconductor region in a second direction crossing the first direction; a sixth electrode provided between the fourth electrode and the fifth electrode and the sixth electrode containing a third conductive material; and a third semiconductor region provided between the fifth electrode and the first semiconductor region in the first direction and the third semiconductor region having a higher concentration of impurities of second conductivity type than the first semiconductor region.