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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12336179 B1

PDFFull Text
Date of Patent:
Jun. 17, 2025

Filed:

Dec. 06, 2022

Semiconductor device and manufacturing method of the semiconductor device

Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Young Geun Jang, Hwaseong-si, KR;

Wan Sup Shin, Seongnam-si, KR;

Ki Hong Lee, Suwon-si, KR;

Jae Jung Lee, Seoul, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:

WILLIAM PARK & ASSOCIATES LTD.

Primary Examiner:

Shih Tsun A Chou

Int. Cl.
CPC ...
H10B 43/27 (2023.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H10B 43/10 (2023.01); H10B 43/40 (2023.01); H10D 30/69 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 21/31144 (2013.01); H01L 21/76897 (2013.01); H01L 23/5226 (2013.01); H10B 43/10 (2023.02); H10B 43/40 (2023.02); H10D 30/694 (2025.01); H10D 64/037 (2025.01);
Abstract

A semiconductor device, and method of manufacturing a semiconductor device, includes second conductive patterns separated from each other above a first stack structure which is penetrated by first channel structures and enclosing second channel structures coupled to the first channel structures, respectively. Each of the second conductive patterns includes electrode portions stacked in a first direction and at least one connecting portion extending in the first direction to be coupled to the electrode portions.

Find Patent Forward Citations

Jang, Young. (2025). Semiconductor device and manufacturing method of the semiconductor device (U.S. Patent No. 12336179). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12336179

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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