Method for selective metallisation of inorganic dielectrics or semiconductors

Abstract

This invention describes a process for selectively depositing metal on the surfaces of inorganic dielectric materials such as glass, ceramics, or semiconductor materials. The method enables the rapid and precise formation of electric circuits on both flat and three-dimensional surfaces. The production method includes steps: firstly, treatment of an item surface with an ultrashort pulse laser of the areas for metallisation, seconds step pre-treatment with the R—OH solution followed by metal salt catalyst activation in a bath and finally electroless metal plating. During immersion in the metal salt catalyst activation bath, localized R—OH molecules on the item's surface act as reducing agents, facilitating the reduction of metal ions from the activation bath. This results in the formation of catalytic seeds exclusively at the laser-modified areas. The metal layers exhibit high adhesion to the dielectric surface due to the formation of chemical bonds.