The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2025

Filed:

Oct. 06, 2021
Applicant:

Samsung Electro-mechanics Co., Ltd., Suwon-si, KR;

Inventors:

Sang Heon Han, Suwon-si, KR;

Won Han, Suwon-si, KR;

Chang Hyun Lim, Suwon-si, KR;

Sung Joon Park, Suwon-si, KR;

Jae Goon Aum, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 41/047 (2006.01); H03H 9/02 (2006.01); H03H 9/13 (2006.01); H03H 9/48 (2006.01); H10N 30/00 (2023.01); H10N 30/87 (2023.01);
U.S. Cl.
CPC ...
H03H 9/02015 (2013.01); H03H 9/131 (2013.01); H03H 9/48 (2013.01); H10N 30/708 (2024.05); H10N 30/871 (2023.02); H03H 9/133 (2013.01);
Abstract

A bulk-acoustic wave (BAVV) resonator is provided. The BAW includes a substrate, a first electrode disposed on the substrate, a piezoelectric layer disposed to cover at least a portion of the first electrode, and a second electrode disposed to cover at least a portion of the piezoelectric layer, wherein the piezoelectric layer includes an intermediate layer, a first layer disposed above the intermediate layer and a second layer disposed below the intermediate layer, the first layer and the second layer are symmetrical in relation to a plane through which a central line of the intermediate layer passes in a thickness direction, and a thickness of the intermediate layer is greater than a thickness of each of the first and second layers.


Find Patent Forward Citations

Loading…