The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Feb. 17, 2020
Mitsubishi Electric Corporation, Tokyo, JP;
Atsushi Era, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
An epitaxial wafer according to the present disclosure includes: a substrate; a buffer layer formed of a crystal having the composition formula represented by AlGaInN (x+y+z=1, y>0) on the substrate; a back-barrier layer formed of a crystal having the composition formula represented by AlGaInN (x+y+z=1, y>0, z>0) on the buffer layer; a channel layer formed of a crystal having the composition formula represented by AlGaInN (x+y+z=1, y>0) on the back-barrier layer; and an electron-supply layer formed of a crystal having the composition formula represented by AlGaInN (x+y+z=1, x>0) on the channel layer. The channel layer is constituted with an upper channel layer underneath the electron-supply layer and a lower channel layer on the back-barrier layer, and the lower channel layer has a C concentration higher than the upper channel layer and contains Si.