The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Aug. 07, 2024
Applicant:
L3harris Technologies, Inc., Melbourne, FL (US);
Inventor:
Bed Pantha, Chandler, AZ (US);
Assignee:
L3HARRIS TECHNOLOGIES, INC., Melbourne, FL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 40/06 (2006.01); G02B 23/12 (2006.01); H01J 1/34 (2006.01); H01J 9/12 (2006.01); H01J 9/20 (2006.01);
U.S. Cl.
CPC ...
H01J 40/06 (2013.01); G02B 23/12 (2013.01); H01J 1/34 (2013.01); H01J 9/12 (2013.01); H01J 9/205 (2013.01); H01J 2201/3423 (2013.01);
Abstract
A photocathode is formed with a first absorber assembly on a first substrate for a first spectral band and a second absorber assembled on a second substrate for a second spectral band. The second substrate is different from the first substrate, and the second spectral band is different from the first spectral band. The first absorber and the second absorber can be joined using a direct semiconductor wafer bonding process. The integration of a second absorber such as an SWIR absorber layer can extend the spectral response of image intensifier tubes.