The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Dec. 09, 2022
Imec Vzw, Leuven, BE;
Katholieke Universiteit Leuven, Ku Leuven R&d, Leuven, BE;
Universiteit Hasselt, Hasselt, BE;
Yinghuan Kuang, Genk, BE;
Tom Aernouts, Westmeerbeek, BE;
Wenya Song, Heverlee, BE;
Stijn Lammar, Heverlee, BE;
Imec vzw, Leuven, BE;
Katholieke Universiteit Leuven, Leuven, BE;
Universiteit Hasselt, Hasselt, BE;
Abstract
A method for forming an intermediate structure in the formation of an optoelectronic device in provided. The method includes: a) obtaining a stack of layers over a substrate holder in a sputtering chamber, the stack of layers comprising an active layer comprising an active material having a perovskite crystal structure, an n-type semiconducting layer comprising a fullerene over the active layer, and an energy alignment layer comprising a lithium halide, a magnesium halide AlOor a metal fluoride on, and in contact with, the n-type semiconducting layer, wherein the energy alignment layer comprises an exposed top surface, and b) sputtering an n-type semiconducting metal oxide layer on the exposed top surface of the energy alignment layer, wherein said sputtering is performed at a sputtering power density of at most 1 W·cmand at a temperature of the stack of layers of at most 100° C.