Memory devices including processing-in-memory architecture configured to provide accumulation dispatching and hybrid partitioning

Abstract

An integrated circuit memory device can include a plurality of banks of memory, each of the banks of memory including a first pair of sub-arrays comprising first and second sub-arrays, the first pair of sub-arrays configured to store data in memory cells of the first pair of sub-arrays, a first row buffer memory circuit located in the integrated circuit memory device adjacent to the first pair of sub-arrays and configured to store first row data received from the first pair of sub-arrays and configured to transfer the row data into and/or out of the first row buffer memory circuit, and a first sub-array level processor circuit in the integrated circuit memory device adjacent to the first pair of sub-arrays and operatively coupled to the first row data, wherein the first sub-array level processor circuit is configured to perform column oriented processing a sparse matrix kernel stored, at least in-part, in the first pair of sub-arrays, with input vector values stored, at least in part, in the first pair of sub-arrays to provide output vector values representing products of values stored in columns of the sparse matrix kernel with the input vector values.