The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2025

Filed:

Jul. 25, 2023
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Masayoshi Tagami, Kuwana Mie, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/06 (2006.01); H01L 25/065 (2023.01); H10B 41/10 (2023.01); H10B 41/20 (2023.01); H10B 43/10 (2023.01); H10B 43/20 (2023.01); H10B 80/00 (2023.01);
U.S. Cl.
CPC ...
G11C 5/063 (2013.01); H01L 25/0657 (2013.01); H10B 41/10 (2023.02); H10B 41/20 (2023.02); H10B 43/10 (2023.02); H10B 43/20 (2023.02); H10B 80/00 (2023.02); H01L 2225/06506 (2013.01);
Abstract

A semiconductor memory device includes first and second chips. The first chip includes a first region and a second region. The first region includes memory cells, bit lines, word lines, and first bonding electrodes electrically connected to bit lines. The second region includes contacts electrically connected to word lines and second bonding electrodes electrically connected to contacts. The first bonding electrodes include a third bonding electrode and a fourth bonding electrode adjacent. The second bonding electrodes include a fifth bonding electrode and a sixth bonding electrode adjacent. A distance from a center position of the third bonding electrode to a center position of the fourth bonding electrode and a distance from a center position of the fifth bonding electrode to a center position of the sixth bonding electrode are matched in a range of from 90% to 110%.


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