The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 10, 2025

Filed:

Dec. 18, 2020
Applicant:

Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;

Inventors:

Stéphane Cadot, Grenoble, FR;

François Martin, Grenoble, FR;

Rémy Gassiloud, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 41/319 (2013.01); C30B 23/02 (2006.01); C30B 29/38 (2006.01); H01L 21/02 (2006.01); H10H 20/01 (2025.01); H10H 20/815 (2025.01); H10H 20/82 (2025.01); H10H 20/825 (2025.01); H10N 30/00 (2023.01); H10N 30/079 (2023.01); H10N 30/853 (2023.01);
U.S. Cl.
CPC ...
H10N 30/079 (2023.02); C30B 23/02 (2013.01); C30B 23/025 (2013.01); C30B 29/38 (2013.01); H01L 21/02422 (2013.01); H01L 21/02458 (2013.01); H01L 21/02513 (2013.01); H01L 21/0254 (2013.01); H10H 20/01335 (2025.01); H10H 20/815 (2025.01); H10H 20/82 (2025.01); H10H 20/825 (2025.01); H10N 30/708 (2024.05); H10N 30/853 (2023.02);
Abstract

Method for manufacturing a thin layer of textured AlN comprising the following successive steps: a) providing a substrate having an amorphous surface, b) forming a polycrystalline nucleation layer of MSwith M=Mo, W or one of the alloys thereof, on the amorphous surface of the substrate, the polycrystalline nucleation layer consisting of crystalline domains the base planes of which are parallel to the amorphous surface of the substrate, the crystalline domains being oriented randomly in an (a, b) plane formed by the amorphous surface of the substrate, c) depositing aluminum nitride on the nucleation layer, leading to the formation of a thin layer of textured AlN.


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