The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 10, 2025

Filed:

Aug. 20, 2021
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Young Jae Jeon, Hwaseong-si, KR;

Woo Geun Lee, Suwon-si, KR;

Jae Beom Choi, Suwon-si, KR;

Jong-In Kim, Seoul, KR;

Jin-Won Lee, Hwaseong-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/32 (2006.01); H10K 50/86 (2023.01); H10K 59/126 (2023.01); H10K 59/131 (2023.01); H10K 71/00 (2023.01);
U.S. Cl.
CPC ...
H10K 59/131 (2023.02); H10K 50/865 (2023.02); H10K 59/126 (2023.02); H10K 71/861 (2023.02);
Abstract

A display device includes a semiconductor layer of a driving transistor; a semiconductor layer of a switching transistor; a semiconductor layer of an initialization transistor; a gate electrode of the driving transistor overlapping a semiconductor layer of the driving transistor; a lower storage electrode connected to the semiconductor layer of the switching transistor; an upper storage electrode connected to the semiconductor layer of the driving transistor, a light blocking pattern, and the semiconductor layer of the initialization transistor, and overlapping the lower storage electrode; a semiconductor layer of a first auxiliary transistor adjacent the semiconductor layer of the switching transistor and/or the semiconductor layer of the initialization transistor; a first electrode of the first auxiliary transistor connected to the semiconductor layer of the first auxiliary transistor; and a second electrode of the first auxiliary transistor connected to the semiconductor layer of the first auxiliary transistor.


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