The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 10, 2025

Filed:

Jul. 20, 2022
Applicant:

Auo Corporation, Hsinchu, TW;

Inventors:

Chun-Hsiang Chan, Hsinchu, TW;

To-Cheng Fan, Hsinchu, TW;

Ting-Wei Tsai, Hsinchu, TW;

Assignee:

AUO CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/851 (2025.01); H01L 25/075 (2006.01); H10H 20/812 (2025.01); H10H 20/819 (2025.01); H10H 20/825 (2025.01); H10H 20/856 (2025.01);
U.S. Cl.
CPC ...
H10H 20/8514 (2025.01); H01L 25/0753 (2013.01); H10H 20/812 (2025.01); H10H 20/819 (2025.01); H10H 20/825 (2025.01); H10H 20/856 (2025.01);
Abstract

An electroluminescent device, wherein the electroluminescent device includes a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, an active layer, a first electrode, a second electrode, and an optical conversion material. The active layer is disposed between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer and electrically connected with these two. The first-conductivity-type semiconductor layer has a light-emitting surface disposed on a side opposite to the active layer, and includes a plurality of 3D structures arranged regularly, extending from the light-emitting surface towards the active layer to jointly define at least one cavity having a depth greater than 70% a thickness of the first-conductivity-type semiconductor layer. The optical conversion material is filled in the cavity.


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