The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 10, 2025

Filed:

Apr. 09, 2021
Applicants:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Centre National DE LA Recherche Scientifique, Paris, FR;

Universite Grenoble Alpes, Saint Martin-d'Heres, FR;

Inventors:

Bruno Daudin, Grenoble, FR;

Gwenole Jacopin, Grenoble, FR;

Julien Pernot, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H10H 20/01 (2025.01); H10H 20/81 (2025.01); H10H 20/812 (2025.01); H10H 20/825 (2025.01);
U.S. Cl.
CPC ...
H10H 20/8252 (2025.01); H10H 20/0137 (2025.01); H10H 20/812 (2025.01); H10H 20/8215 (2025.01);
Abstract

A light-emitting diode is provided, including: a first layer of n-doped AlGaInN, with X1>0 and X1+Y1≤1; a second layer of p-doped AlGaInN, with X2>0 and X2+Y2≤1; an active area disposed between the first and the second layers and comprising at least one multi-quantum well emissive structure; nanowires based on AlN p-doped with indium and magnesium atoms, disposed on the second layer; and an ohmic contact layer in contact with the nanowires. A method for producing a light-emitting diode is also provided.


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