The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2025
Filed:
May. 02, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Changyoung Park, Yongin-si, KR;
Sanghun Lee, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
Provided is a high-quality substrate including a silicon layer, a multilayer buffer layer on the silicon layer, and an indium phosphide (InP) layer on the multilayer buffer layer, wherein a crystal growth direction of the silicon layer is a direction inclined by 1° to 10° with respect to a vertical direction, and wherein the multilayer buffer layer includes a buffer layer in which a crystal growth direction is inclined with respect to the vertical direction.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile