The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 10, 2025

Filed:

Mar. 23, 2022
Applicants:

Sanken Electric Co., Ltd., Niiza, JP;

Allegro Microsystems, Llc, Manchester, NH (US);

Inventor:

Taro Kondo, Niiza, JP;

Assignees:

SANKEN ELECTRIC CO., LTD., Niiza, JP;

Allegro MicroSystems, LLC, Manchester, NH (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/00 (2025.01); H10D 30/66 (2025.01); H10D 62/17 (2025.01); H10D 64/01 (2025.01); H10D 64/23 (2025.01);
U.S. Cl.
CPC ...
H10D 64/115 (2025.01); H10D 30/668 (2025.01); H10D 62/393 (2025.01); H10D 64/01 (2025.01); H10D 64/117 (2025.01); H10D 64/252 (2025.01);
Abstract

A semiconductor device is disclosed including a sub-layer with first conductivity type, a drift layer with first conductivity type, a base region with second conductivity type positioned on the drift layer, a source region in contact with the base region, a source electrode, a plurality of trenches, at least one of the trenches in contact with the drift layer, the base region, and the source region, a plurality of insulating regions, at least one of the insulating regions positioned inside of each trench, a plurality of gate electrodes, at least one of the gate electrodes positioned inside of each trench; and a plurality of field plates, at least one of the field plates electrically connected to the source electrode and positioned in the insulating region in the trench. The field plate comprises high-resistance polysilicon.


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