The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2025
Filed:
Jul. 27, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Namkyu Cho, Yongin-si, KR;
Sanggil Lee, Ansan-si, KR;
Seokhoon Kim, Suwon-si, KR;
Pankwi Park, Incheon, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device may include a substrate including center and edge regions, active patterns on the substrate, channel patterns on the active patterns, source/drain patterns connected to the channel patterns, and gate electrodes on the channel patterns. Each of the source/drain patterns may include a buffer layer in contact with a corresponding one of the channel patterns and a main layer on the buffer layer. The main layer of each of the source/drain patterns may include first and second semiconductor layers, which may be sequentially stacked and contain germanium. A concentration of the germanium in the first semiconductor layer may be higher on the center region than on the edge region, and a concentration of the germanium in the second semiconductor layer may be lower on the center region than on the edge region.