The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2025
Filed:
Aug. 02, 2022
Applicant:
Auo Corporation, Hsinchu, TW;
Inventors:
Assignee:
AUO Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 51/05 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 64/01 (2025.01); H10K 10/46 (2023.01);
U.S. Cl.
CPC ...
H10D 30/6757 (2025.01); H10D 30/031 (2025.01); H10D 30/6729 (2025.01); H10D 30/673 (2025.01); H10D 64/01 (2025.01); H10K 10/481 (2023.02); H10K 10/486 (2023.02);
Abstract
A semiconductor device, including a first gate, a second gate, a third gate, a first semiconductor layer, a second semiconductor layer, a source, and a drain, is provided. The first semiconductor layer is located between the first gate and the second gate. The second gate is located between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is located between the second gate and the third gate. The source is electrically connected to the first semiconductor layer and the second semiconductor layer. The drain is electrically connected to the first semiconductor layer and the second semiconductor layer.