The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2025
Filed:
Aug. 04, 2022
Auo Corporation, Hsinchu, TW;
AUO Corporation, Hsinchu, TW;
Abstract
A semiconductor device, including a substrate, a semiconductor structure, a first gate dielectric layer, a first gate, a source, and a drain, is provided. The semiconductor structure includes a first metal oxide layer and a second metal oxide layer. The second metal oxide layer covers a top surface and a sidewall of the first metal oxide layer. The second metal oxide layer has a stepped structure at the sidewall of the first metal oxide layer. A carrier mobility of the first metal oxide layer is greater than a carrier mobility of a channel region of the second metal oxide layer. A thickness of the second metal oxide layer is greater than or equal to a thickness of the first metal oxide layer. A difference between a width of the first gate and a width of the first metal oxide layer is less than 0.5 μm.