The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 10, 2025

Filed:

Oct. 18, 2022
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventor:

Yukihiro Tsuji, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/01 (2025.01); H10D 62/13 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 30/015 (2025.01); H10D 62/161 (2025.01); H10D 64/01 (2025.01);
Abstract

A method of manufacturing a semiconductor device includes: forming an electron transit layer; forming an electron supply layer; forming a protective film; forming a zinc oxide film; forming a sacrifice layer; forming a first opening and a second opening in the sacrifice layer and the zinc oxide film; forming a third opening connecting to the first opening and a fourth opening connecting to the second opening; forming, by acid treatment using a weakly acidic solution, a first gap in a first portion exposed to the first opening of the zinc oxide film, and a second gap in a second portion exposed to the second opening of the zinc oxide film; forming, after the acid treatment, a source region on a bottom surface of the third opening and a drain region on a bottom surface of the fourth opening; and removing the zinc oxide film.


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