The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 10, 2025

Filed:

May. 06, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Yanghee Lee, Incheon, KR;

Jonghyuk Park, Hwaseong-si, KR;

Jinwoo Bae, Yongin-si, KR;

Boun Yoon, Seoul, KR;

Ilyoung Yoon, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/50 (2023.02); H10B 12/0335 (2023.02); H10B 12/09 (2023.02); H10B 12/315 (2023.02); H10B 12/34 (2023.02);
Abstract

A semiconductor device may include a substrate including a cell region and a peripheral region, lower electrodes on the cell region of the substrate, a dielectric layer on surfaces of the lower electrodes, a silicon germanium layer on the dielectric layer, a metal plate pattern and a polishing stop layer pattern stacked on the silicon germanium layer, and upper contact plugs physically contacting an upper surface of the silicon germanium layer. The upper contact plugs may have an upper surface farther away from the substrate than an upper surface of the polishing stop layer pattern. The upper contact plugs may be spaced apart from the metal plate pattern and the polishing stop layer pattern.


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