The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 10, 2025

Filed:

Apr. 20, 2023
Applicant:

Beijing Superstring Academy of Memory Technology, Beijing, CN;

Inventors:

Jin Dai, Beijing, CN;

Yong Yu, Beijing, CN;

Jing Liang, Beijing, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H10D 30/67 (2025.01);
U.S. Cl.
CPC ...
H10B 12/30 (2023.02); H10B 12/05 (2023.02);
Abstract

A transistor, a 3D memory and a manufacturing method therefor, and an electronic device are provided in the present application. The 3D memory includes a plurality of layers of memory cells stacked in a direction perpendicular to a substrate, and a word line. A memory cell includes a transistor which includes a source and a drain, a gate extending in the direction perpendicular to the substrate, a semiconductor layer surrounding a sidewall of the gate. The semiconductor layer includes a source contact region and a drain contact region arranged at intervals. A channel between the source contact region and the drain contact region is a horizontal channel, and the word line extends in the direction perpendicular to the substrate and penetrates through the memory cells of different layers.


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