The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 10, 2025

Filed:

Dec. 15, 2023
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Tatsuya Kabe, Osaka, JP;

Hideyuki Arai, Osaka, JP;

Hisashi Aikawa, Osaka, JP;

Yuki Sugiura, Osaka, JP;

Akito Inoue, Osaka, JP;

Mitsuyoshi Mori, Kyoto, JP;

Kentaro Nakanishi, Nara, JP;

Yusuke Sakata, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 25/75 (2023.01); H04N 25/766 (2023.01); H10F 39/00 (2025.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H04N 25/75 (2023.01); H04N 25/766 (2023.01); H10F 39/18 (2025.01); H10F 39/8037 (2025.01); H10F 39/811 (2025.01);
Abstract

A light detector is configured such that a light receiving portion having APDs and a peripheral portion are provided on a first principal surface of a p-type semiconductor substrate, and further includes a back electrode provided on a second principal surface of the semiconductor substrate and a p-type first separation portion provided between the light receiving portion and the peripheral portion. The APD has, on a first principal surface side, an n-type region and a p-epitaxial layer contacting the n-type region in a Z-direction. The peripheral portion has an n-type MISFET provided at a p-well and an n-well provided to surround entire side and bottom portions of the p-well.


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