The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 10, 2025

Filed:

Apr. 11, 2023
Applicant:

Gowin Semiconductor Corporation, GuangZhou, CN;

Inventor:

Jinghui Zhu, San Jose, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/1776 (2020.01); G11C 11/16 (2006.01); G11C 11/22 (2006.01); G11C 13/00 (2006.01); G11C 16/10 (2006.01); H03K 19/17724 (2020.01); H03K 19/17736 (2020.01);
U.S. Cl.
CPC ...
H03K 19/1776 (2013.01); G11C 11/1675 (2013.01); G11C 11/2275 (2013.01); G11C 13/0004 (2013.01); G11C 13/0069 (2013.01); G11C 16/10 (2013.01); H03K 19/17724 (2013.01); H03K 19/17736 (2013.01);
Abstract

A programmable integrated circuit device able to be selectively programmed to perform one or more logic functions includes multiple configurable logic blocks ('LBs'), routing fabric, and a nonvolatile memory (“NVM”). While the configurable LBs are able to be selectively programmed to perform one or more logic functions, the routing fabric selectively routes information between the configurable LBs and input/output ports based on a routing configuration signals. The NVM, such as magnetoresistive random access memory (“MRAM”), phase-change memory, or ferroelectric RAM (“FeRAM”), is flexibly organized to contain a configuration NVM storage and a user NVM storage, wherein the user NVM storage is a word addressable memory capable of facilitating random memory access.


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