The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2025
Filed:
Dec. 03, 2019
Applicant:
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Inventors:
Takenori Watabe, Annaka, JP;
Hiroshi Hashigami, Annaka, JP;
Assignee:
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/448 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0262 (2013.01); C23C 16/40 (2013.01); C23C 16/4481 (2013.01); H01L 21/02565 (2013.01);
Abstract
A method for manufacturing a gallium oxide film where a mist generated by atomizing a raw-material solution or by forming a raw-material solution into droplets is conveyed using a carrier gas, the mist is heated, and the mist is subjected to a thermal reaction on the substrate to form a film, whereas the raw-material solution, a raw-material solution containing at least a chloride ion and a gallium ion is used, and the mist is heated for 0.002 seconds or more and 6 seconds or less. This provides a method for manufacturing a α-gallium oxide film at low cost with excellent film forming speed.