The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 10, 2025

Filed:

Jun. 29, 2023
Applicant:

Advanced Micro Devices, Inc., Santa Clara, CA (US);

Inventors:

Divya Madapusi Srinivas Prasad, Mountain View, CA (US);

Michael Ignatowski, Austin, TX (US);

Assignee:

Advanced Micro Devices, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); G11C 19/00 (2006.01);
U.S. Cl.
CPC ...
G11C 11/221 (2013.01); G11C 19/005 (2013.01);
Abstract

A memory device includes a memory circuitry includes a first transmission grate, a first capacitor, a second transmission gate, and a second capacitor. The first transmission gate includes a first transistor connected between a first node and a second node. The first transistor having a gate terminal connected to a first clock node. The first clock node configured to receive a first clock signal. The first capacitor is connected between the second node and a first voltage node. The first capacitor is a ferroelectric capacitor. The second transmission gate includes a second transistor connected between the second node and a third node. The second transistor has a gate terminal connected to the first clock node. The second capacitor is connected between the third node and a second voltage node.


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