The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
Dec. 01, 2021
International Business Machines Corporation, Armonk, NY (US);
Ashim Dutta, Clifton Park, NY (US);
Lili Cheng, Rexford, NY (US);
Chih-Chao Yang, Glenmont, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Embodiments of the invention include a method for fabricating a semiconductor device and the resulting structure. A substrate having an embedded memory area interconnect structure and an embedded non-memory area interconnect structure is provided, the memory area interconnect structure comprising metal interconnects formed in the substrate. A metal line on a metal interconnect of the non-memory area interconnect structure is formed. A first dielectric layer on exposed surfaces of the non-memory area is formed. A hardmask is formed on the dielectric layer. A second dielectric layer is formed on exposed surfaces of the memory area. A bottom metal contact is formed in a trench, a bottom surface of the bottom metal contact on a top surface of a first metal interconnect of the memory area interconnect structure. A memory element stack pillar is formed on the bottom metal contact.