The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
Jul. 20, 2020
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Satoshi Keino, Kanagawa, JP;
SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa, JP;
Abstract
A solid-state imaging device includes an imaging element array that includes M imaging elements arranged in a first direction and N imaging elements arranged in a second direction, that is, M×N imaging elements in total, each of the imaging elements including a photoelectric conversion unit that includes a photoelectric conversion layer, an insulation layer, a charge discharge electrode, an upper electrode, and a charge accumulation electrode. The photoelectric conversion layer is provided as a common layer at least for the N imaging elements. The photoelectric conversion unit of each of the imaging elements further includes a first charge transfer control electrode, a second charge transfer control electrode, and a light shielding layer. The photoelectric conversion layerincludes a photoelectric conversion layer-first regionA, a photoelectric conversion layer-second regionB, and a photoelectric conversion layer-third regionC. The light shielding layercovers at least the photoelectric conversion layer-second regionB and the photoelectric conversion layer-third regionC.