The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
Jul. 09, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Donggun Lee, Hwaseong-si, KR;
Jonguk Seo, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A nitride semiconductor light emitting device includes: a semiconductor laminate having a first conductivity-type semiconductor layer and a lattice buffer layer in which InGaN layers and GaN layers are alternately stacked, the semiconductor laminate having a columnar body portion protruding through etching of a peripheral region, an insulating layer covering the semiconductor laminate and having an opening at an upper surface of the body portion, and a light emitting structure including a second conductivity-type semiconductor disposed on the upper surface the body portion and selectively grown in the lattice buffer layer to have a side surface inclined with respect to the upper surface of the body portion, an active layer covering the second conductive semiconductor layer, and a third conductivity-type semiconductor layer covering the active layer and contacting the insulating layer.